Title :
Photocurrent transients in amorphous chalcogenides: evidence for trap-controlled recombination
Author :
Iovu, M.S. ; Shutov, S.D. ; Arkhipov, V.I. ; Rebeja, S.Z. ; Bulgaru, M.G. ; Colomeyko, E.P.
Author_Institution :
Inst. of Appl. Phys., Kishinev, Moldova
Abstract :
The transient photocurrents in amorphous thermally deposited AsSe, As2Se3 and As2Se3:Sn films were studied in step-function mode of light excitation. The photocurrent rise and decay was found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Strong dependence of capture process on film composition was demonstrated through its influence on photocurrent transients
Keywords :
arsenic compounds; chalcogenide glasses; electron-hole recombination; hole traps; photoconductivity; semiconductor thin films; As2Se3; As2Se3:Sn; AsSe; amorphous chalcogenide; hole trap-controlled recombination; light excitation; nonstationary capture; photocurrent transient; step-function mode; thermally deposited film; Amorphous materials; Charge carrier processes; Dispersion; Energy capture; Glass; Material storage; Photoconductivity; Physics; Radiative recombination; Temperature;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651547
