Photocurrent transients in amorphous chalcogenides: evidence for trap-controlled recombination

Author

Iovu, M.S. ; Shutov, S.D. ; Arkhipov, V.I. ; Rebeja, S.Z. ; Bulgaru, M.G. ; Colomeyko, E.P.

Author_Institution

Inst. of Appl. Phys., Kishinev, Moldova

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

53

Abstract

The transient photocurrents in amorphous thermally deposited AsSe, As₂Se₃ and As₂Se₃:Sn films were studied in step-function mode of light excitation. The photocurrent rise and decay was found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Strong dependence of capture process on film composition was demonstrated through its influence on photocurrent transients

Keywords

arsenic compounds; chalcogenide glasses; electron-hole recombination; hole traps; photoconductivity; semiconductor thin films; As₂Se₃; As₂Se₃:Sn; AsSe; amorphous chalcogenide; hole trap-controlled recombination; light excitation; nonstationary capture; photocurrent transient; step-function mode; thermally deposited film; Amorphous materials; Charge carrier processes; Dispersion; Energy capture; Glass; Material storage; Photoconductivity; Physics; Radiative recombination; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651547

Filename

651547