Title :
A quantitative analysis of the penetration of SnO2 into porous silicon
Author :
Gartner, M. ; Savaniu, C. ; Parlog, C. ; Zaharescu, M. ; Craciun, G. ; Buiu, O. ; Szilagy, E. ; Cobianu, C.
Author_Institution :
Inst. of Phys. Chem., Acad. of Sci., Bucharest, Romania
Abstract :
The oxidation of monocrystalline silicon wafer (even at low temperatures ~500°C) through the pores of SnO2 sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR)
Keywords :
Rutherford backscattering; elemental semiconductors; ellipsometry; infrared spectra; oxidation; porous materials; silicon; sol-gel processing; tin compounds; 500 C; Rutherford backscattering; Si-SnO2; SnO2 penetration; SnO2 sol-gel film; infrared spectroscopy; monocrystalline silicon wafer; oxidation; porous silicon; quantitative analysis; spectroscopic ellipsometry; Dielectric substrates; Ellipsometry; Infrared sensors; Oxidation; Polymer films; Semiconductor films; Sensor arrays; Silicon; Sputtering; Tin;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651552
