Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

Author

Lepsa, M.I. ; van de Roer, Th G ; Kwaspen, J.J.M. ; Smalbrugge, E. ; van der Vleuten, W. ; Kaufmann, L.M.F.

Author_Institution

COBRA Inst., Eindhoven Univ. of Technol., Netherlands

Volume

1

fYear

1997

fDate

7-11 Oct 1997

Firstpage

139

Abstract

Three terminal (3T) Double Barrier Resonant Tunneling (DBRT) devices having the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The technological solution is based on high selective etching processes to reach the plane of the very thin quantum well on which, subsequently, a Schottky base contact is obtained using a nonalloyed Ti/Pt/Au metallization scheme. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigations on DBRT structures and suggest important applications in high-speed electronics

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; etching; gallium arsenide; metallisation; resonant tunnelling devices; semiconductor quantum wells; 3T-DBRT device; AC measurement; DC measurement; GaAs-AlAs; GaAs/AlAs material; Schottky base contact; Ti-Pt-Au; electrical characteristics; high-speed electronics; nonalloyed Ti/Pt/Au metallization; quantum well; selective etching; three terminal double barrier resonant tunneling device; Contacts; Current measurement; Electric variables; Electric variables measurement; Etching; Gallium arsenide; Gold; Metallization; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651566

Filename

651566