Title :
A DC-100 GHz Bandwidth and 20.5 dB Gain Limiting Amplifier in 0.25µm InP DHBT Technology
Author :
Daneshgar, Saeid ; Griffith, Zach ; Rodwell, Mark J. W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
A DC-100 GHz limiting amplifier is designed and fabricated in a 0.25μm InP DHBT technology. The amplifier is designed in two stages using a modified Cherry-Hooper architecture proceeding an emitter-follower at each stage. Consuming 145 mW of power from a -2.5 V supply, it achieves 20.5 dB differential S21 gain with less than 1 dB gain ripple and better than 20 dB and 15 dB input and output return losses, respectively. The group delay of S21 is 9 psec with a variation less than ±5.5 psec around that. Time domain large signal measurements verifies a single-ended output swing of 260 mV.
Keywords :
III-V semiconductors; differential amplifiers; heterojunction bipolar transistors; indium compounds; limiters; millimetre wave amplifiers; millimetre wave bipolar transistors; time-domain analysis; DHBT technology; InP; bandwidth 100 GHz; emitter-follower; gain 20.5 dB; limiting amplifier; loss 15 dB; modified Cherry-Hooper architecture; power 145 mW; single-ended output swing; size 0.25 mum; time 9 ps; time domain large signal measurement; voltage -2.5 V; voltage 260 mV; Bandwidth; Broadband communication; Frequency measurement; Gain; Indium phosphide; Limiting; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659197
