Title :
Complex studies of porous silicon aging phenomena
Author :
Torchinskaya, T.V. ; Korsunskaya, N.E. ; Khomenkova, L.Yu. ; Sheinkman, M.K. ; Baran, N.P. ; Misiuk, A. ; Surma, B.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Abstract :
The complex studies of PS aging process show that two different substances take part in luminescence excitation. The nature of these substances is discussed. One of them is the species which is desorbed during aging with activation energy ~0.5-0.6 eV. The energy transfer from absorption to luminescence centers is supposed
Keywords :
ageing; elemental semiconductors; photoluminescence; porous materials; silicon; Si; aging; energy transfer; luminescence excitation; porous silicon; Aging; Electromagnetic wave absorption; Electrons; Etching; Kinetic theory; Luminescence; Physics; Silicon; Temperature; Wire;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651574
