Title :
An integrated color pixel in 0.18/spl mu/m CMOS technology
Author :
Catrysse, P. ; Wandell, B. ; El Gamal, A.
Author_Institution :
Inf. Syst. Lab., Stanford Univ., CA, USA
Abstract :
A method for controlling photodetector wavelength responsivity via metal layer patterns is demonstrated in a standard 0.18/spl mu/m CMOS technology. Responsivities suitable for RGB integrated color pixels, peaking at 450nm, 575nm and 750nm, are measured. Over 100% uncovered area transmittances are measured. We discuss possible theoretical explanations for the observed high transmittance.
Keywords :
CMOS image sensors; photodetectors; 0.18 micron; 450 nm; 575 nm; 750 nm; CMOS technology; RGB integrated color pixel; area transmittance; metal layer pattern; photodetector wavelength responsivity; Area measurement; CMOS image sensors; CMOS technology; Circuits; Color; Filters; Photodetectors; Photodiodes; Pixel; Wavelength measurement;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979568
