Title :
Optimum design of multi-finger SiGe HBT with non-uniform length for power application
Author :
Ning, Hu ; Wan-rong, Zhang ; Dong-Yue, Jin ; Hong-Yun, Xie ; Lu, Huang ; Yi-Wen, Huang ; Pei, Shen ; Jia, Li ; Jun-Ning, Gan
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing
Abstract :
With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can operate at large current and has a higher power handling capability in power application.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; thermal stability; SiGe; heterojunction bipolar transistors; multifinger HBT; nonuniform emitter length structure; thermal stability; three-dimensional thermal-electrical model; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Resistors; Silicon germanium; Temperature distribution; Thermal conductivity; Thermal engineering; Thermal stability;
Conference_Titel :
Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on
Conference_Location :
Kunming
Print_ISBN :
978-1-4244-2192-3
Electronic_ISBN :
978-1-4244-2193-0
DOI :
10.1109/ISAPE.2008.4735522
