Title :
On the average-gap model in amorphous materials
Author :
Tomozeiu, Nicolae
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
Abstract :
The dispersion of the subband refractive index in amorphous semiconductors is well described by “average gap” model which is based on two-band model of optical transitions. The disorder potentials due to the “electrostatic” and “elastic” forces determine the variation of the conduction-and valence-band edges. The average gap is defined as the difference between the most probable values of the bottom of the conduction band and the top of the valence band. The model is applied on a-Si1-xCx:H, a-C:H and a-SiOxNy layers
Keywords :
amorphous semiconductors; conduction bands; refractive index; valence bands; C:H; SiC:H; SiON; amorphous semiconductors; average-gap model; conduction band; disorder potentials; elastic forces; electrostatic forces; optical transitions; subband refractive index; two-band model; valence band edges; Absorption; Amorphous materials; Amorphous semiconductors; Density measurement; Electrostatics; Optical refraction; Optical variables control; Photonic band gap; Physics; Refractive index;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651582
