DocumentCode :
2167834
Title :
Photovaricaps on ZnIn2S4 and CdGaInS4
Author :
Radautsan, S. ; Arama, E. ; Zhitar, V. ; Moldovyan, N.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Chishinau, Moldova
Volume :
1
fYear :
1997
fDate :
7-11 Oct 1997
Firstpage :
267
Abstract :
The paper presents the results of investigation of photovaricaps based on Pt-ZnIn2S4 (CdGaInS4) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (103 Hz) photovaricaps having a super position coefficient of capacity (4-20) and the quality factor (10-60) have been defined
Keywords :
Q-factor; cadmium compounds; gallium compounds; indium compounds; photocapacitance; photodiodes; platinum; ternary semiconductors; varactors; zinc compounds; 1E3 Hz; CdGaInS4; Pt-CdGaInS4; Pt-ZnIn2S4; ZnIn2S4; impurity band; photovaricaps; position coefficient; quality factor; spectral region; Absorption; Conductivity; Crystals; Impurities; Lighting; Ohmic contacts; P-n junctions; Physics; Q factor; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
Type :
conf
DOI :
10.1109/SMICND.1997.651595
Filename :
651595
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2167834
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