Title :
Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters
Author :
Tenbroek, B.M. ; Redman-White, W. ; Lee, M.S.L. ; Bunyan, R.J.T. ; Uren, M.J.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
The study presented here provides valuable insight into the variation of thermal resistances and capacitances with SOI MOSFET device geometry. It demonstrates that small-signal measurements are a powerful technique for investigating heat flow paths in MOSFETs. An empirical approach is presented that allows estimation of dynamic thermal parameters directly from device geometries, based on a limited set of measurements
Keywords :
MOSFET; capacitance; silicon-on-insulator; thermal resistance; SOI MOSFET; capacitance; dynamic thermal parameters; geometry dependence; heat flow; small-signal measurements; thermal resistance; Capacitance; Electrical resistance measurement; Geometry; Interpolation; MOSFET circuits; Semiconductor device modeling; Semiconductor films; Silicon; Thermal conductivity; Thermal resistance;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634959
