DocumentCode :
2168074
Title :
Frequency Dispersion of Drain Conductance in AlGaN/GaN HEMT Evaluated Using Sinusoidal Wave Signal Input
Author :
Wakejima, A. ; Yamada, Tomoaki ; Narita, T. ; Ando, A. ; Egawa, T.
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan
fYear :
2013
fDate :
13-16 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
We firstly demonstrate dynamic change in a drain conductance of an AlGaN/GaN HEMT from DC to high frequency using sinusoidal wave input signal from a network analyzer which can sweep from hertz to giga hertz. Prior to measurements, a bias-T which is adaptable at a frequency of hertz to mega hertz has been developed. S-parameter measurements sweeping from 5 Hz to 3 GHz reveals that the magnitude of S22 significantly decreases at a hertz to mega hertz frequency range although the phase of S22 is negligibly stable. Also, it is found that the drain conductance evaluated from drain I-V characteristics and that extracted from S- parameters at 100 Hz are comparable and that a drain conductance from mega hertz to hundreds mega hertz is stable, indicating that some trapping or de-trapping effects occur at this frequency range.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; network analysers; wide band gap semiconductors; AlGaN-GaN; S-parameter measurements; bias-T; de-trapping effects; drain I-V characteristics; drain conductance; frequency 5 Hz to 3 GHz; frequency dispersion; mega hertz frequency; network analyzer; sinusoidal wave signal input; trapping effects; Aluminum gallium nitride; Frequency measurement; Gallium nitride; HEMTs; Logic gates; Microwave transistors; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/CSICS.2013.6659227
Filename :
6659227
Link To Document :
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