Title :
Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 200 mm Si (111) Substrate
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
Developments of heteroepitaxial growth and characteristics of MOCVD-grown AlGaN/GaN HEMTs on Si substrates are presented. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystal quality of a following GaN layer and in growing thick device structure on Si. The AlGaN/GaN HEMT has been successfully grown on 8-inch Si, which indicates that the gas phase reaction is minimized in this growth. The device exhibited the excellent uniformity, the 2DEG properties and the device characteristics.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; elemental semiconductors; epitaxial growth; gallium compounds; high electron mobility transistors; semiconductor superlattices; silicon; substrates; two-dimensional electron gas; wide band gap semiconductors; 2DEG properties; AlGaN-AlN; AlGaN-GaN; GaN-/AlN strained layer superlattice; GaN-AlN; MOCVD-grown AlGaN-GaN HEMT; Si; Si substrates; crystal quality; gas phase reaction; heteroepitaxial growth; high-temperature-grown AlGaN-AlN intermediate layers; size 200 mm; size 8 inch; thick device structure; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; HEMTs; III-V semiconductor materials; Silicon; Substrates;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/CSICS.2013.6659231