DocumentCode
2168384
Title
Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications
Author
Komiak, J.J. ; Smith, P.M. ; Duh, K.H.G. ; Xu, D. ; Chao, P.C.
Author_Institution
Electron. Syst., BAE Syst., Nashua, NH, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance. Efforts to further improve performance, manufacturability, and verify reliability will be reported. We also describe the design and performance of low noise MMIC amplifiers based on this technology.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; GaAs; low noise MMIC amplifiers; low noise performance; metamorphic HEMT technology; metamorphic high electron mobility transistors; microwave applications; size 50 nm to 100 nm; submillimeter-wave applications; Gallium arsenide; Indium phosphide; Logic gates; MMICs; Noise; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659237
Filename
6659237
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