DocumentCode
2168600
Title
Organic thin film phototransistors and fast circuits
Author
Gundlach, D.J. ; Zhou, L. ; Nichols, J.A. ; Huang, J.-R. ; Sheraw, C.D. ; Jackson, T.N.
Author_Institution
Dept. of Electr. Eng., Penn State Univ., University Park, PA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
We have fabricated organic thin film transistors (OTFTs) using the small-molecule organic semiconductor naphthacene as the active layer material with field-effect mobility greater than 0.1 cm/sup 2//V-s. This mobility is acceptable for several large-area electronic applications. OTFTs fabricated using naphthacene films show a large photosensitivity, of potential interest for applications requiring phototransistors. The threshold voltage and subthreshold region electrical characteristics of naphthacene OTFTs allow the fabrication of OTFT circuits without active layer patterning and do not require the use of a level shift stage such as that used to fabricate pentacene OTFT circuits. 5-stage ring oscillators fabricated with naphthacene OTFTs have single-stage propagation delay of less than 28 /spl mu/s; the fastest organic circuits reported to date.
Keywords
delays; high-speed integrated circuits; molecular electronics; organic semiconductors; phototransistors; thin film transistors; 28 mus; 5-stage ring oscillators; OTFT circuits; active layer material; fast organic circuits; field-effect mobility; large-area electronic applications; naphthacene; organic thin film transistors; photosensitivity; single-stage propagation delay; small-molecule organic semiconductor; subthreshold region electrical characteristics; thin film phototransistors; threshold voltage; Organic materials; Organic semiconductors; Organic thin film transistors; Phototransistors; Semiconductor films; Semiconductor materials; Semiconductor thin films; Thin film circuits; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979621
Filename
979621
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