DocumentCode :
2168650
Title :
Transistor Laser for Electronic-Photonic Integrated Circuits
Author :
Feng, Ming ; Holonyak, Nick
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2013
fDate :
13-16 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
We have demonstrated the first transistor that simultaneously operated as a transistor and as a laser - the "transistor laser" (2004). The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 100 GHz. Three-port operation expands the use of the transistor laser to electronic-photonic integrated circuits.
Keywords :
electron-hole recombination; heterojunction bipolar transistors; integrated optics; integrated optoelectronics; quantum well lasers; direct modulation bandwidth; electronic-photonic integrated circuits; quantum wells; recombination lifetime; semiconductor laser; tilted charge; transistor laser; Cavity resonators; Integrated optics; Laser modes; Radiative recombination; Semiconductor lasers; Stimulated emission; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/CSICS.2013.6659247
Filename :
6659247
Link To Document :
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