Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs

Author

Bolognesi, C.R. ; Dvorak, M.W. ; Pitts, O. ; Watkins, S.P. ; MacElwee, T.W.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We study the mechanism giving rise to the "Kirk-like" f/sub T/ roll-off at very high-current densities in "type-II" lineup InP/GaAsSb/InP DHBTs, and we compare this mechanism to the behavior of conventional "type-I" SHBTs and DHBTs. Because of the type-II band lineup, the physical operation of InP/GaAsSb/InP DHBTs differs significantly from that of conventional devices. The present paper provides the first clarification of high current operation in these devices, as well as new experimental insights into the operation of conventional type-I DHBTs.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-GaAsSb-InP; InP/GaAsSb/InP double heterostructure bipolar transistor; Kirk-like current gain cutoff frequency roll-off; high current operation; temperature characteristics; type-I DHBT; type-I HBT; type-II band lineup; Bipolar transistors; Current density; Cutoff frequency; Double heterojunction bipolar transistors; Electronic mail; Indium phosphide; Laboratories; Physics; Semiconductor devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979628

Filename

979628