Title :
High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications
Author :
Sokolich, A. ; Thomas, S., III ; Fields, C.H.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We demonstrate an InP-based high-speed, low-power HBT technology with 180 GHz cutoff frequency. Current Mode Logic (CML) static dividers at 64 GHz maximum toggle rate at a power dissipation of 29 mW/flip-flop and 16 GHz maximum toggle rate at a power dissipation of 1.8 mW/flip-flop show that the technology is applicable to dense 40 Gbps logic circuits. Submicron InP HBT technology opens up the possibility of one thousand logic gates all operating at 10-40 GHz clock rates at a few watts of total power dissipation.
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; current-mode logic; dividing circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; 1.8 mW; 10 to 40 GHz; 16 GHz; 180 GHz; 29 mW; 40 Gbit/s; 64 GHz; InAlAs-InGaAs; InAlAs/InGaAs heterojunction bipolar transistor; InP; InP substrate; current mode logic static divider; cutoff frequency; dense ultra-high-speed digital applications; flip-flop; high-speed low-power operation; logic circuit; logic gate; power dissipation; submicron technology; toggle rate; Clocks; Cutoff frequency; Flip-flops; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic circuits; Logic gates; Power dissipation;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979631
