Title :
A study of LBO effects in a 40 nm SA-MSCFET
Author :
Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Kang, Shiang-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
This work aims to examine and analyze carefully the effects of block oxide length (LBO) in a 40 nm multi-substrate-contact field-effect transistor (MSCFET). In addition, the proposed structure is based on the self-aligned (SA) gate-to-body technique. In the MSCFET design the two key parameters are the length and the height of the block oxide which are so sensitive to the short-channel effects (SCEs). Because the research of the block oxide height (HBO) has already been done as described in [1], in this study we will focus on the influence of LBO on the SA-MSCFET. Also, some preliminary characteristics of the new configuration developed are demonstrated by using TCAD simulations.
Keywords :
field effect transistors; technology CAD (electronics); MSCFET; TCAD simulations; block oxide height; block oxide length; multi-substrate-contact field-effect transistor; self-aligned gate-to-body technique; short-channel effects; Boron; CMOS technology; Epitaxial growth; Etching; FETs; Insulation; Numerical simulation; Silicon on insulator technology; Sputtering; Substrates; block oxide height (HBO); block oxide length (LBO); multi-substrate-contact field-effect transistor (MSCFET); self-aligned (SA); short-channel effects (SCEs);
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567248
