Abstract :
The following topics are dealt with: nonvolatile memory devices; storage devices; nonstoichiometric films; thermal stability; thermal oxidation; fully CMOS compatible WOx resistive random access memory (RRAM); hybrid redox molecular/silicon field-effect memory devices; resistive switching memory device; reliability; NiO-based resistive switching memory elements; dynamic random access memory (DRAM); flash memories; embedded nonvolatile memory; phase change memory; nanocrystal memories; and advance dielectrics.
Keywords :
DRAM chips; field effect memory circuits; flash memories; oxidation; phase change memories; random-access storage; reduction (chemical); reliability; stoichiometry; thermal stability; NiO-based resistive switching memory elements; advance dielectrics; dynamic random access memory; embedded nonvolatile memory; flash memory; fully CMOS compatible WOx resistive random access memory; hybrid redox molecular-silicon field effect memory devices; nanocrystal memory; nonstoichiometric films; nonvolatile memory devices; phase change memory; reliability; resistive switching memory device; storage devices; thermal oxidation; thermal stability;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090565
