Title :
A novel hot-hole injection degradation model for lateral nDMOS transistors
Author :
Moens, P. ; Tack, M. ; Degraeve, R. ; Groeseneken, G.
Author_Institution :
Technol. R&D, Alcatel Microelectron., Oudenaarde, Belgium
Abstract :
For the first time, the degradation of a DMOS transistor is shown to be due to hot hole injection in the drift region field oxide. The saturation effects observed in the parameter shifts are reproduced by a new degradation model using the bulk current as the driving force. A very good agreement with experimental data is obtained for various stressing conditions.
Keywords :
electron traps; hot carriers; impact ionisation; power MOSFET; semiconductor device models; bulk current; drift region field oxide; electron trapping; hot-hole injection degradation model; impact ionisation reduction; lateral nDMOS transistors; parameter shifts; safe operating area; saturation effects; smart-power technologies; stress conditions; CMOS process; CMOS technology; Charge carrier processes; Degradation; Hot carriers; Microelectronics; Pulse measurements; Research and development; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979653
