Title :
High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 /spl mu/m SiGe:C BiCMOS technology
Author :
Ehwald, K.-E. ; Heinemann, B. ; Roepke, W. ; Winkler, W. ; Rucker, H. ; Fuernhammer, F. ; Knoll, D. ; Barth, R. ; Hunger, B. ; Wulf, H.E. ; Pazirandeh, R. ; Ilkov, N.
Author_Institution :
IHP, Frankfurt, Germany
Abstract :
We demonstrate high performance RF LDMOS transistors integrated into an advanced industrial 0.25 /spl mu/m BiCMOS process with only one additional mask level. These devices have minimum 0.25 /spl mu/m physical gate lengths, use the 5 nm standard gate oxide of the logic transistors, and show f/sub T/ and f/sub max/ values of up to 30 and 50 GHz, respectively. The breakdown voltages are between 26 V and 13 V depending on layout. The power-added efficiency (PAE) is 70% at 560 mW/2 GHz and 60% at 340 mW/5 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF field effect transistors; UHF integrated circuits; carbon; integrated circuit technology; power MOSFET; semiconductor device breakdown; 0.25 micron; 13 to 26 V; 2 to 5 GHz; 30 GHz; 340 to 560 mW; 5 nm; 50 GHz; 60 to 70 percent; RF LDMOS transistors; SiGe:C; SiGe:C BiCMOS technology; breakdown voltages; five nm standard gate oxide; high performance RF LDMOS; power-added efficiency; BiCMOS integrated circuits; Capacitance; Electric breakdown; Implants; Logic devices; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979657
