Title :
Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure
Author :
Rahaman, S.Z. ; Maikap, S. ; Chiu, H.C. ; Lin, C.H. ; Wu, T.Y. ; Chen, Y.S. ; Tzeng, P.J. ; Chen, F. ; Kao, M.J. ; Tsai, M.J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
Abstract :
Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ~0.5 V, good resistance ratio (RHigh/RLow) of 1.6 times 102, good endurance of >1.5 times 105 cycles, and excellent retention (>11 hours) with a resistance ratio of > 1.3 times 102 at 150degC can be used in future nonvolatile memories.
Keywords :
aluminium; bipolar integrated circuits; copper; germanium alloys; integrated memory circuits; low-power electronics; selenium alloys; tungsten; Cu chain formation; W-Ge0.4Se0.6-Cu-Al; bipolar resistive switching memory device; current 1 nA to 500 muA; current 200 muA; current monitoring; erase voltage monitoring; low power operation; low resistance state; programming current; temperature 150 degC; voltage 1.3 V; CMOS technology; Electrodes; Electronics industry; Industrial electronics; Laboratories; Monitoring; Oxidation; Power engineering and energy; Solids; Voltage;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090597
