DocumentCode :
2169922
Title :
Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices
Author :
Tallarida, G. ; Huby, N. ; Kutrzeba-Kotowska, B. ; Spiga, S. ; Arcari, M. ; Csaba, G. ; Lugli, P. ; Redaelli, A. ; Bez, R.
Author_Institution :
Lab. Naz. MDM, CNR-INFM, Agrate Brianza
fYear :
2009
fDate :
10-14 May 2009
Firstpage :
1
Lastpage :
3
Abstract :
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
Keywords :
II-VI semiconductors; Schottky diodes; cryogenic electronics; nitrogen compounds; random-access storage; rectification; wide band gap semiconductors; zinc compounds; NiO; Schottky junction fabrication; ZnO; crossbar nonvolatile memory devices; forward current density; low-temperature rectifying junction; switching memory element; Current density; Electrodes; Gold; Material storage; Nonvolatile memory; Ohmic contacts; Schottky diodes; Semiconductor diodes; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
Type :
conf
DOI :
10.1109/IMW.2009.5090598
Filename :
5090598
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2169922
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