• DocumentCode
    2170372
  • Title

    Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing

  • Author

    Maszara, W.P. ; Gondran, C.F.H. ; Jackett-Murphy, S. ; Vasudev, P.K. ; Iyer, S.S. ; Anc, M.J.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    130
  • Lastpage
    131
  • Abstract
    We have conducted an investigation to evaluate the impact of both touch-polish and hydrogen annealing at different temperatures on the roughness, on the SOI film removal, as well as the impact of so processed surface on the integrity of gate oxide thermally grown on it, for SIMOX and BESOI material
  • Keywords
    SIMOX; annealing; polishing; silicon-on-insulator; surface topography; BESOI material; H2; SIMOX material; SOI film; hydrogen annealing; roughness; surface smoothing; thermal gate oxide; touch polishing; Annealing; Atomic measurements; Hydrogen; Rough surfaces; Silicon; Smoothing methods; Surface morphology; Surface roughness; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634967
  • Filename
    634967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2170372