DocumentCode :
2170488
Title :
Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design
Author :
Pagani, M. ; Argento, D. ; Bignamini, M. ; Francesco, I. De ; Favre, G. ; Meazza, A. ; Mornata, A. ; Palomba, F.
Author_Institution :
ERICSSON LAB ITALY, Via Cadorna, 73 - 20090 - Vimodrone (MI) - Italy
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
1
Lastpage :
4
Abstract :
In this paper the intermodulation distortion (IMD) behaviour of a 0.25 power PHEMT is investigated under several device operating conditions. An extensive experimental device characterisation, together with numerical simulations using suitable non-linear transistor models is carried out. Experimental data were compared with different transistor models in order to understand the effect of the various cell parameters on the device IMD3 response. The data collected were applied in the design of a highly linear power amplifier family, covering different frequency ranges.
Keywords :
Data analysis; Distortion measurement; High power amplifiers; Impedance measurement; Linearity; MMICs; Nonlinear distortion; PHEMTs; Performance evaluation; Power measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
Type :
conf
DOI :
10.1109/EUMA.2002.339281
Filename :
4140361
Link To Document :
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