Title :
BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process
Author :
Iijima, T. ; Lin, Q. ; Chen, S. ; Labelle, C. ; Fuller, N. ; Ponoth, S. ; Cohen, S. ; Lloyd, J. ; Dunn, D. ; Muzzy, C. ; Gill, J. ; Nitta, S. ; McGahay, V. ; Tyberg, C. ; Spooner, T. ; Nye, H.
Author_Institution :
Toshiba America Electron. Components Inc.
Abstract :
We have demonstrated porous ultra low-K (ULK)/Cu interconnect integration using via first integration scheme and a direct ULK CMP process. The key features of the damage-resistant porous ULK material were novel material chemistry, a higher carbon concentration (15.4 atm%) and an improved pore structure. These improved features of the new ULK material enabled superior process-induced dielectric material damage during patterning etch, resist strip, and ULK direct CMP. Interconnect structures fabricated using the conventional ULK material showed high short leakage currents and open failures due to moisture uptake. The integrated structures of the new, robust porous ULK material exhibited good electrical properties. The target capacitance values have been achieved for future porous ULK/Cu interconnects
Keywords :
chemical mechanical polishing; integrated circuit interconnections; leakage currents; low-k dielectric thin films; porous materials; BEOL integration; damage resistance; dielectric material damage; direct CMP process; electrical properties; interconnect structures; leakage currents; patterning etch; porous material; resist strip; ultra low K material; via-first process; Capacitance; Chemistry; Dielectric materials; Etching; Leakage current; Moisture; Organic materials; Resists; Robustness; Strips;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648634
