Title :
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT
Author :
Verma, Neha ; Jogi, Jyotika ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
Electron concentration profiles are simulated for the double-gate (DG) InAlAs/InGaAs/InP HEMT for nanometer gate dimension with two separate gate controls on either side of the double heterostructure. A Quantum Moments model has been used to account for the quantization effects in the device. The quantum simulation of the confinement of the charge carriers in the nano-dimensional channel formed between the two hetero structures reveals a single peak for electron concentration in the channel with enhanced gate control. Moreover, simulated quantum results obtained for ID-VDS are verified by comparing them with the experimental 100nm Double-gate InAlAs/InGaAs/InP HEMT and are in good agreement.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; nanoelectronics; HEMT; InAlAs-InGaAs-InP; charge carrier; double gate quantum domain; double heterostructure; electron concentration; electron concentration profile; enhanced gate control; nanodimensional channel; nanometer gate dimension; quantization effect; quantum moment model; quantum simulation; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Mathematical model; Semiconductor process modeling; double gate HEMT (DGHEMT); electron concentration; nanodimensions; quantum well; separate gate; simulation;
Conference_Titel :
Computer Modelling and Simulation (UKSim), 2012 UKSim 14th International Conference on
Conference_Location :
Cambridge
Print_ISBN :
978-1-4673-1366-7
DOI :
10.1109/UKSim.2012.101
