• DocumentCode
    2171900
  • Title

    High mobility InAs/AlInAs metamorphic heterostructures on InP(001)

  • Author

    Wallart, X. ; Lastennet, J. ; Mollot, F.

  • Author_Institution
    Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS, Villeneuve d´´Ascq, France
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    We present the optimization of the metamorphic growth of InAs/InAlAs heterostructures on InP(001). We obtain the best electron mobility, 21500 cm2/V.s at 300K and 179000 cm2/V.s at 77K, with a composite InAs/InGaAs channel.
  • Keywords
    III-V semiconductors; aluminium compounds; electron mobility; indium compounds; semiconductor heterojunctions; semiconductor thin films; 300 K; 77 K; InAs-InAlAs; InP; composite channel; electron mobility; high mobility InAs-InAlAs metamorphic heterostructures; optimization; Capacitive sensors; Electron mobility; Frequency; Gallium arsenide; Indium compounds; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517428
  • Filename
    1517428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2171900