Novel CMP Barrier Slurry for Integrated Porous Low-k Technology of 45nm Node

Author

Kuo, H.H. ; Song, J.Y. ; Lin, K.C. ; Chou, C.C. ; Chen, Y.H. ; Jeng, S.M. ; Yu, C.H. ; Liang, M.S.

Author_Institution

Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu

fYear

2006

fDate

5-7 June 2006

Firstpage

137

Lastpage

139

Abstract

The process integration of novel Cu CMP´s barrier slurry for the 45nm-node non-capped ultra low-k (ULK, k < 2.5) technology is reported. The slurry, based on a ´self-stop´ concept, was designed to mitigate the impact of ULK damage, such as unexpectedly high removal rate and drifted polish selectivity, by etching-related processes. After analyzing the pattern density effect and the damaged layer, a film-damage-recovery process and CMP soft-landing approach were also integrated in order to have an enhanced Rs stability

Keywords

chemical mechanical polishing; copper; integrated circuit interconnections; low-k dielectric thin films; porous materials; 45 nm; CMP barrier slurry; CMP soft-landing approach; Cu; ULK damage; ULK technology; film-damage-recovery process; pattern density effect; porous low-k technology; ultra low-k technology; Ash; Degradation; Etching; Inhibitors; Pattern analysis; Research and development; Semiconductor device manufacture; Slurries; Stability analysis; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648669

Filename

1648669