DocumentCode
2172192
Title
Power potentiality at 94 GHz of InP HEMTs with large band gap channels
Author
Medjdoub, E. ; Zaknoune, M. ; Wallart, X. ; Theron, D.
Author_Institution
IEMN, Villeneuve d´´ascq, France
fYear
2005
fDate
8-12 May 2005
Firstpage
137
Lastpage
140
Abstract
We have investigated InP HEMT structures with large band gap channels for power amplification at 94 GHz. We show that structures containing InP an InAsP channels are very promising for power amplification at 94 GHz.
Keywords
III-V semiconductors; energy gap; indium compounds; millimetre wave power amplifiers; power HEMT; 94 GHz; InAsP; InAsP channel; InP; InP HEMTs; large band gap channels; power amplification; power potentiality; Art; Frequency; Gain; HEMTs; Indium phosphide; MODFETs; Metallization; Photonic band gap; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517438
Filename
1517438
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