DocumentCode :
2172242
Title :
Application of polysilicon emitters to high voltage bipolar transistors for realizing high quasi-saturation current limits under forced gain conditions
Author :
Kumar, M.J. ; Roulston, D.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear :
1993
fDate :
14-17 Sep 1993
Firstpage :
798
Abstract :
Using numerical simulation, it is demonstrated that for a given collector-emitter breakdown voltage (BVceo), the quasi-saturation current limit of the high voltage transistor under forced gain conditions can be tremendously increased by using a polysilicon emitter in place of the traditional deep diffused emitter. The numerical results are explained using the quasi-saturation analysis of high voltage bipolar transistors. It is further shown that emitter current crowding effects are less significant in polyemitter high voltage transistors compared to metal contacted deep diffused transistors
Keywords :
electric breakdown of solids; numerical analysis; power transistors; semiconductor device models; collector-emitter breakdown voltage; emitter current crowding effects; forced gain conditions; high quasi-saturation current limits; high voltage bipolar transistors; high voltage transistor; metal contacted deep diffused transistors; numerical simulation; polysilicon emitters; quasi-saturation analysis; Application software; Bipolar transistors; Breakdown voltage; Conductivity; Current density; Doping profiles; Electron emission; Numerical simulation; Proximity effect; Quasi-doping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 1993. Canadian Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-2416-1
Type :
conf
DOI :
10.1109/CCECE.1993.332416
Filename :
332416
Link To Document :
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