• DocumentCode
    2172630
  • Title

    DC and AC characteristics of HBTs with different base width

  • Author

    Wang, Che-Ming ; Hsin, Yue-Ming

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    185
  • Lastpage
    187
  • Abstract
    This paper discusses the DC and AC characteristics of InGaP/GaAs HBTs with different base width from 1.2 μm to 2.0 μm. There is no significant difference on dc current gain, common-emitter IV characteristics and fT-performance due to the identical emitter layout. However, HBT with 1.2 μm base width demonstrated lowest fMAX. This is due to the limits on base current flowing in the 1.2 μm base width, where fMAX is dominated by RB instead of CBC.
  • Keywords
    capacitance; electric resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 1.2 to 2.0 micron; AC characteristics; DC characteristics; HBTs; InGaP-GaAs; base resistance; base width; base-collector junction capacitance; common-emitter I-V characteristics; current gain; Capacitance; Contact resistance; Current measurement; Etching; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Performance gain; Power amplifiers; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517452
  • Filename
    1517452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172630