Title :
Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges
Author :
Guedj, C. ; Arnal, V. ; Girault, V. ; Imbert, G. ; Daamen, R. ; Hoofman, R.J.O.M. ; Gaillard, F. ; Gosset, L. ; Assous, M. ; Bouchu, D. ; Mitard, J. ; Toffoli, A. ; Jousseaume, V. ; Favennec, L. ; Stich, A. ; Pamler, W. ; Gabric, Z. ; Torres, J. ; Passema
Author_Institution :
CEA-DRT-LETI-DTS-CEA-GRE, Grenoble
Abstract :
The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of the dielectric stack via their bandgap. In addition, this non-destructive characterization is sensitive to internal strain, and is adapted to sub-32 nm generations
Keywords :
electro-optical effects; integrated circuit interconnections; spectra; advanced interconnects; chemical composition; dielectric stack; electro-optical method; internal strain; nondestructive characterization; spectral photoresponse; standard comb test structures; Absorption; Chemicals; Dielectric materials; Dielectric measurements; Lighting; Optical interconnections; Photoconductivity; Photonic band gap; Silicon carbide; Strain measurement;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648695
