DocumentCode :
2172678
Title :
Modelling of InP HEMTs with high indium content channels
Author :
Kalna, K. ; Elgaid, K. ; Thayne, I. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
192
Lastpage :
195
Abstract :
Performance of sub-100 nm InP HEMTs with various indium contents in the channel is studied using an ensemble Monte Carlo device simulator. A detail insight into the non-equilibrium electron transport in the InGaAs channel is reported.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; InGaAs; InGaAs channel; InP; InP HEMTs modelling; ensemble Monte Carlo device simulator; high indium content channels; nonequilibrium electron transport; variable indium content; Acoustic scattering; Electron optics; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Monte Carlo methods; Optical buffering; Optical scattering; Phonons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517454
Filename :
1517454
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172678
بازگشت