DocumentCode :
2172861
Title :
Crystalline quality improvement of In0.52Al0.48As/In0.53Ga0.47As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing
Author :
Ihn, Soo-Ghang ; Jo, Seong-June ; Oh, Kyoung-Hwan ; Kim, Tae-Woo ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
216
Lastpage :
218
Abstract :
Effects of post-growth rapid thermal annealing (RTA) on optical and structural properties of an In0.52Al0.48As/In0.53Ga0.47As multi-quantum-well (MQW) structure on a GaAs substrate by using an InAlAs/InGaAlAs metamorphic buffer were investigated. Photoluminescence spectrum and triple-axis (004) contour maps showed improvement in crystalline quality of the metamorphic MQW structure through the post-growth RTA.
Keywords :
III-V semiconductors; aluminium compounds; buffer layers; gallium arsenide; indium compounds; optical properties; photoluminescence; rapid thermal annealing; semiconductor heterojunctions; semiconductor quantum wells; GaAs substrate; In0.52Al0.48As-In0.53Ga0.47As; InAlAs-InGaAlAs-GaAs; crystalline quality; metamorphic buffer; metamorphic multiquantum-well structure; optical properties; photoluminescence spectrum; post-growth rapid thermal annealing effects; semiconductor heterostructure; structural properties; Crystallization; Gallium arsenide; High speed optical techniques; Indium compounds; Indium phosphide; Optical buffering; Plasma temperature; Quantum well devices; Rapid thermal annealing; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517460
Filename :
1517460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172861
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