Title :
Characteristics of self-assembled GaInNAs/GaAsN quantum dot lasers grown by solid source molecular beam epitaxy
Author :
Liu, C.Y. ; Sun, Z.Z. ; Yoon, S.F. ; Yew, K.C.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
GalnNAs quantum dot lasers, grown using solid source molecular beam epitaxy, have been fabricated. The laser worked under continuous wave operation at room temperature. The lasers were also studied under pulsed operation with different temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor quantum dots; 293 to 298 K; GaInNAs-GaAsN; continuous wave operation; pulsed operation; self-assembled GaInNAs-GaAsN quantum dot lasers; solid source molecular beam epitaxy; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Pulsed laser deposition; Quantum dot lasers; Quantum well lasers; Solid lasers; Temperature; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517465
