DocumentCode
2172983
Title
Characteristics of self-assembled GaInNAs/GaAsN quantum dot lasers grown by solid source molecular beam epitaxy
Author
Liu, C.Y. ; Sun, Z.Z. ; Yoon, S.F. ; Yew, K.C.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2005
fDate
8-12 May 2005
Firstpage
233
Lastpage
236
Abstract
GalnNAs quantum dot lasers, grown using solid source molecular beam epitaxy, have been fabricated. The laser worked under continuous wave operation at room temperature. The lasers were also studied under pulsed operation with different temperature.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor quantum dots; 293 to 298 K; GaInNAs-GaAsN; continuous wave operation; pulsed operation; self-assembled GaInNAs-GaAsN quantum dot lasers; solid source molecular beam epitaxy; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Pulsed laser deposition; Quantum dot lasers; Quantum well lasers; Solid lasers; Temperature; US Department of Transportation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517465
Filename
1517465
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