Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section

Author

Jeong, Tae Woung ; Iiyama, Koichi ; Takamiya, Sabro

Author_Institution

Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

250

Lastpage

253

Abstract

A heterojunction bipolar transistor (HBT) is known as a high-speed transistor. However, a speed of a two terminal heterojunction phototransistor (2T-HPT) is generally very low due to so small self-bias-current generated by an weak incident optical signal. In this paper, we describe the fabrication and characterization of a lateral InGaAs photodiode and (utilizing it) 2T-InP/InGaAs HPT. The responsivity of the photodiode is 0.2 A/W at a wavelength of 1.55 μm. The current gain of the amplifier section is 25. The cut-off frequency, under a low incident power of 10 μW, was improved 9 times by narrowing the emitter area from 5 μm×100 μm to 3 μm× 15 μm.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; photodiodes; 1.55 micron; HBT; InP-InGaAs; amplifier; current gain; cut-off frequency; high-speed transistor; lateral photodiode; optical signal; self-bias-current; two terminal InP-InGaAs heterojunction bipolar phototransistor; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical sensors; Photodiodes; Phototransistors; Signal generators; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517470

Filename

1517470