Electromagnetic modeling of non-uniform serpentine flexure based RF-MEMS switch

Author

Sharma, Arvind Kumar ; Gupta, Neeraj

Author_Institution

Dept. of Electr. & Electron. Eng., Birla Inst. of Technol. & Sci. Pilani, Pilani, India

fYear

2013

fDate

21-23 Sept. 2013

Firstpage

322

Lastpage

324

Abstract

This paper presents electromagnetic modeling of Non-uniform serpentine flexure based RF-MEMS switch. The Radio Frequency (RF) performance of the RF MEMS switch is obtained by scattering parameters (Insertion loss, Return loss and Isolation) which are mainly dominated by down state to upstate capacitance ratio and MEMS bridge geometries. This RF MEMS switch results in low insertion loss of -0dB to -0.3dB with considerable isolation of more than -40dB at 10-50 GHz in unactuated and actuated states of MEMS bridge.

Keywords

electromagnetic wave scattering; microswitches; microwave switches; Insertion loss; MEMS bridge geometries; RF-MEMS switch; down state; electromagnetic modeling; frequency 10 GHz to 50 GHz; isolation; nonuniform serpentine flexure; radiofrequency performance; return loss; scattering parameters; unactuated state; upstate capacitance ratio; Bridge circuits; Capacitance; Insertion loss; Micromechanical devices; Microswitches; Radio frequency; RF MEMS; electromagnetic model; scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Electronic Systems (ICAES), 2013 International Conference on

Conference_Location

Pilani

Print_ISBN

978-1-4799-1439-5

Type

conf

DOI

10.1109/ICAES.2013.6659420

Filename

6659420