DocumentCode :
2173593
Title :
5 km nearly dispersion penalty free transmission of FP lasers at 10 Gb/s and 85°C
Author :
Chen, T.R. ; Erlig, H. ; Chen, S.B. ; Qi, H.H. ; Vang, T. ; Yeh, X. ; Kwong, N.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
319
Lastpage :
322
Abstract :
Dispersion penalty free transmission at 5 km, 85°C, and 10 Gb/s was demonstrated using AlGaInAs FP lasers, through careful spectral management, laser material and structure optimization. These optimized devices demonstrated lasing to over 120°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical materials; quantum well lasers; thermo-optical effects; 10 Gbit/s; 120 C; 5 km; 85 C; AlGaInAs; AlGaInAs FP laser; dispersion penalty free transmission; laser material; spectral management; structure optimization; Costs; Environmental management; Extinction ratio; Fiber lasers; Laser modes; Optical device fabrication; Optical materials; Quantum well lasers; Temperature distribution; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517490
Filename :
1517490
Link To Document :
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