DocumentCode :
2173736
Title :
Highly reliable InP-based HBTs with a ledge structure operating at current density over 2 mA/μm2
Author :
Fukai, Yoshino K. ; Kurishima, Kenji ; Ida, Minoru ; Yamahata, Shoji ; Enoki, Takatomo
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
339
Lastpage :
342
Abstract :
We have developed highly reliable InP-based HBTs with a ledge structure. The lifetime of discrete transistors, which is independent of stress current density over 2mA/μm2, is predicted to be 1×107 h at 125°C.
Keywords :
III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; 125 C; 1E7 h; InP; discrete transistors lifetime; ledge structure; reliable InP-based HBTs; stress current density; Current density; Degradation; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Passivation; Silicon compounds; Stress; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517496
Filename :
1517496
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173736
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