Title :
Topological characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs
Author :
Matsuura, Tetsuya ; Miyamoto, Tomoyuki ; Ohta, Masataka ; Koyama, Fumio
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We found the size enlargement of MBE grown InAs quantum dot (QD) on GaAs using a Sb-introduced Ga(In)As cover layer for the first time. The effect of the GaInAsSb cover layer on topological properties of QDs was investigated for various indium (In) and antimony (Sb) compositions in cover layers by atomic force microscopy (AFM). Elongation of the PL wavelength was confirmed as the result of increase of the QD height with reduced lateral size.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; AFM; GaAs; GaInAs covering; GaInAsSb layer; GaInAsSb-InAs; InAs quantum dots; MBE growth; antimony compositions; atomic force microscopy; indium compositions; photoluminescence wavelength; size enlargement; topological properties; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Indium; Quantum dot lasers; Quantum dots; Substrates; Temperature control; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517499
