DocumentCode
2173977
Title
MBE growth of InN and InGaN for 1 μm wavelength optical device applications
Author
Nanish, Y. ; Kurouchi, Masahito ; Naoi, Hiroyuki ; Araki, Tsutomu ; Miyajima, Takao
fYear
2005
fDate
8-12 May 2005
Firstpage
368
Lastpage
373
Keywords
Diode lasers; Gallium arsenide; Gallium nitride; Laser stability; Optical devices; Optical films; Optical materials; Photonic band gap; Plasma temperature; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517504
Filename
1517504
Link To Document