High-resistive n- and p-type In0.53Ga0.47As layers produced by cold Fe-ion bombardments

We have investigated the effects of Fe-ion bombardment at 77 K temperature in the electrical isolation of n- and p- type InGaAs layers. Maximum resistivity of ∼4×10⁶ and ∼7×10⁶ Ω/sq at optimum annealing temperature of ∼250 and 600°C has been recorded for p- and n- type InGaAs materials, respectively. Also, low dissipation loss comparable to S.I. InP substrate has been observed. Thermally stable high resistive regions close to intrinsic value of InGaAs (∼10⁷ Ω/sq) and good RF dissipation loss have been achieved. To the best of our knowledge these results are reported here for the first time.