DocumentCode
2174302
Title
Ion sources for commercial ion implanter applications
Author
Walther, S.R. ; Pedersen, B.O. ; McKenna, C.M.
Author_Institution
Varian Ion Implant Syst., Gloucester, MA, USA
fYear
1991
fDate
6-9 May 1991
Firstpage
2088
Abstract
The authors review some of the history as well as recent developments in the implanter ion source field. It is noted that ion sources for implantation have changed considerably since implantation was first used commercially. Dramatic increases in beam output have been sustained with each new generation of ion implanters. In addition to the drive for improved beam currents, the need of the implant users for reliable long-life operation has driven much of the new development in implanter ion sources. In addition, the opportunity to achieve new capabilities, such as buried oxide layers, has sparked novel ion source designs to answer the demand. Particular attention is given here to microwave ion sources, the single ring cusp ion source, and multicusp ion sources.<>
Keywords
ion implantation; ion sources; beam output; buried oxide layers; implanter ion source; long-life operation; microwave ion sources; multicusp ion sources; single ring cusp ion source; Anodes; Apertures; Cathodes; Electrons; Fault location; Implants; Ion beams; Ion implantation; Ion sources; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 1991. Accelerator Science and Technology., Conference Record of the 1991 IEEE
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-0135-8
Type
conf
DOI
10.1109/PAC.1991.164876
Filename
164876
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