• DocumentCode
    2174304
  • Title

    Eigen states of valence-band in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using transmission spectroscopy

  • Author

    Tanaka, Kiyoshi ; Kotera, N. ; Mishima, T.

  • Author_Institution
    Hiroshima City Univ., Japan
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    419
  • Lastpage
    420
  • Abstract
    Transmission of a lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) structure irradiated with halogen lamp was measured at room temperature. Fine steplike structures accentuated by the exciton peaks of interband transitions were observed in the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structures by transmission spectroscopy. Below 120 K, a third light-hole transition appeared. Energy of the three light-hole transition was lower than one expected with calculation. The lower energy of the three light-hole transition might suggest nonparabolicity of the light-hole.
  • Keywords
    III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; semiconductor quantum wells; valence bands; wide band gap semiconductors; 120 K; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As multiquantum wells; exciton peaks; halogen lamp irradiation; interband transitions; lattice matched MQWs; light-hole transition; nonparabolicity; transmission spectroscopy; valence-band eigenstates; Detectors; Excitons; Indium phosphide; Laboratories; Lamps; Lattices; Quantum well devices; Spectroscopy; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517517
  • Filename
    1517517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174304