Influence of Si/sub 3/N/sub 4/ passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures

Author

Liu, Yuwei ; Wang, Hong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.

fYear

2005

fDate

8-12 May 2005

Firstpage

520

Lastpage

522

Abstract

The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures has been studied. An increase in effective mobility mu_e with a negligible change of sheet carrier density n_s after SiN deposition is clearly observed. Our results suggest that the enhancement of mu_e could be explained under the framework of electrons transfer from the InP sub-channel into InGaAs channel region due to the energy band bending at surface region caused by SiN passivation

Keywords

band structure; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; passivation; silicon compounds; InGaAs-InP; InGaAs-InP composite channel high electron mobility transistor structures; Si₃N₄; Si₃N₄ passivation; electron transfer; energy band bending; sheet carrier density; silicon nitride passivation; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Plasma measurements; Plasma temperature; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517547

Filename

1517547