• DocumentCode
    2175229
  • Title

    Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications

  • Author

    Elgaid, K. ; McLelland, H. ; Stanley, C.R. ; Thayne, I.G.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    523
  • Lastpage
    525
  • Abstract
    We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an fT of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz
  • Keywords
    III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave amplifiers; millimetre wave receivers; 0.550 THz; 24 GHz; 7.3 dB; 90 GHz; InP; InP-HEMT; LNA noise figure; low noise W-band MMMIC amplifier; millimeterwave receivers applications; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; Noise figure; Probes; Process design; Radio frequency; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517548
  • Filename
    1517548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2175229