DocumentCode
2175299
Title
Luminescence and photocurrent spectroscopy of self-assembled InAs quantum wires on InP[001]
Author
Suárez, F. ; Wang, W. ; Fuster, D. ; González, L. ; González, Y. ; Golmayo, D. ; García, J.M. ; Dotor, M.L.
Author_Institution
Inst. de Microelectron. de Madrid, CSIC, Madrid
fYear
2005
fDate
8-12 May 2005
Firstpage
530
Lastpage
532
Abstract
In this work we present the characterization by photoluminescence (PL) and photocurrent (PC) of laser structures growth by molecular beam epitaxy (MBE) on InP(100) substrates with active region formed by stacked layers of InAs quantum wires (QWR)
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoemission; photoluminescence; self-assembly; semiconductor quantum wires; InAs; InP; InP(100) substrates; laser structure growth; molecular beam epitaxy; photocurrent spectroscopy; photoluminescence; self-assembled InAs quantum wires; Indium phosphide; Luminescence; Molecular beam epitaxial growth; Photoconductivity; Photoluminescence; Quantum dot lasers; Spectroscopy; Substrates; Surface emitting lasers; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517550
Filename
1517550
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