• DocumentCode
    2175347
  • Title

    Bi2-xSbxTe3 thick thermoelectric films obtained by electrodeposition from hydrochloric acid solutions

  • Author

    Nedelcu, M. ; Sima, M. ; Visan, T. ; Pascu, Tatiana ; Franga, Lzabela ; Craciunoiu, F.

  • Author_Institution
    Nat. Inst. for Mater. Phys., Bucharest, Romania
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    322
  • Lastpage
    326
  • Abstract
    A method to produce composition modulated Bi2-xSbx Te3 alloys by electrodeposition has been developed. The electrolyte, which consists in a HCl 6M (pH = 0) aqueous solution, allows the codeposition of bismuth, antimony and tellurium to be accomplished at room temperature on glassy carbon, platinum or nickel electrode. The composition of the films, their crystal structures and morphology were studied as function of electrochemical parameters and bath composition. It is shown that the electrodeposits are monophasic and exhibit a polycrystalline state. The electrical resistivity was of the order of 7-10 mΩcm, whereas the electrodeposition rate value was 30-50 μm/h for the films with good thermoelectric properties
  • Keywords
    antimony compounds; bismuth compounds; electrical resistivity; electrodeposition; electrodeposits; semiconductor growth; semiconductor materials; semiconductor thin films; surface structure; thermoelectricity; 7 to 10 mohmcm; Bi2-xSbxTe3 thick thermoelectric films; Bi2SbTe3; C; HCl; Ni; Pt; bath composition; codeposition; composition modulated Bi2-xSbxTe3 alloys; crystal structure; electrical resistivity; electrochemical parameters; electrodeposition; electrodeposition rate; electrodeposits; film composition; film morphology; glassy carbon electrode; hydrochloric acid solution; nickel electrode; platinum electrode; thermoelectric properties; Bismuth; Electric resistance; Electrodes; Morphology; Nickel; Platinum; Tellurium; Temperature; Thermoelectricity; Tin alloys;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979897
  • Filename
    979897