Efficient and accurate method for intra-gate defect diagnoses in nanometer technology and volume data

Improving diagnosis resolution becomes very important in nanometer technology. Nowadays, defects are affecting gate and transistor level. In this paper, we present a new method to volume diagnosis intra-gate defects affecting standard cell Integrated Circuits (ICs). Our method can identify the cause of failure of different intra-gate defects such as bridge, open and resistive-open defects. Our method gives accurate results since it is based on the use of physical information extracted from library cells layout. Our method can also locate intra-gate defects in presence of multiple faults. Experimental results show the efficiency of our approach to isolate injected defects on industrial designs.